Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are analyzed utilizing Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis of your defect stacking faults, inclusions of defects as well as their https://www.quora.com/profile/Trevor-Flatcher-2/Advantages-of-Silicon-Carbide-Materials-in-High-Temperature-Electronic-Devices-Silicon-carbide-SiC-has-emerged-as-a-c